1.5v drive pch mosfet RQ1A070AP ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) low voltage drive (1.5v drive). 3) small surface mount package (tsmt8). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 3000 RQ1A070AP ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss 0 to ?? 8v continuous i d ? 7a pulsed i dp ? 28 a continuous i s ? 1a pulsed i sp ? 28 a power dissipation p d 1.5 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 83.3 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode *2 *1 *1 * tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) abbreviated symbol : sg ?2 ?1 (8) (7) (6) (5) (1) (2) (3) (4) 1/6 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RQ1A070AP ? electrical characteristics (ta = 25 q c) symbol min. typ. max. unit gate-source leakage i gss -- 10 p av gs = 8v, v ds =0v drain-source breakdown voltage v (br)dss 12 - - v i d = 1ma, v gs =0v zero gate voltage drain current i dss -- 10 p av ds = 12v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds = 6v, i d = 1ma -1014 i d = 7a, v gs = 4.5v -1319 i d = 3.5a, v gs = 2.5v -1827 i d = 3.5a, v gs = 1.8v -2448 i d = 1.4a, v gs = 1.5v forward transfer admittance l y fs l11 - - sv ds = 6v, i d = 7a input capacitance c iss - 7800 - pf v ds = 6v output capacitance c oss - 900 - pf v gs =0v reverse transfer capacitance c rss - 850 - pf f=1mhz turn-on delay time t d(on) - 25 - ns v dd 6v, i d = 3.5a, rise time t r - 135 - ns v gs = 4.5v turn-off delay time t d(off) - 550 - ns r l =1.7 : fall time t f - 260 - ns r g =10 : total gate charge q g - 80 - nc v dd 6v, i d = 7a, gate-source charge q gs - 12 - nc v gs = 4.5v gate-drain charge q gd -13-nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- 1.2 v i s = 7a, v gs =0v *pulsed conditions conditions m : parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * **** * * * 2/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1A070AP ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 1.0v t a =25 c pulsed v gs = - 4.5v v gs = - 1.5v v gs = - 1.8v v gs = - 1.2v v gs = - 2.5v 0 1 2 3 4 5 6 7 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 1.0v v gs = - 4.5v v gs = - 1.5v v gs = - 2.5v v gs = - 1.8v v gs = - 1.2v t a =25 c pulsed 1 10 100 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m w ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a =25 c pulsed 0.1 1 10 100 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m w ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m w ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 2.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m w ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 1.8v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1A070AP 1 10 100 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m w ] drain current : - i d [a] fig.7 static drain - source on - state resistance vs. drain current v gs = - 1.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.8 forward transfer admittance vs. drain current v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.9 typical transfer characteristics v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.10 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 10 20 30 40 50 0 2 4 6 8 static drain - source on - state resistance r ds(on) [m w ] gate - source voltage : - v gs [v] fig.11 static drain - source on - state resistance vs. gate - source voltage t a =25 c pulsed i d = - 7.0a i d = - 1.4a 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.12 switching characteristics t d(on) t r t d(off) t f v dd P - 6v v gs = - 4.5v r g =10 w t a =25 c pulsed 4/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1A070AP 0 1 2 3 4 5 0 20 40 60 80 100 gate - source voltage : - v gs [v] total gate charge : q g [nc] fig.13 dynamic input characteristics t a =25 c v dd = - 6v i d = - 7a pulsed 100 1000 10000 100000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : - v ds [v] fig.14 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.15 maximum safe operating area t a =25 c single pulse mounted on a ceramic board. (30mm ? 30mm ? 0.8mm) operation in this area is limited by r ds(on) (v gs = - 4.5v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.16 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse mounted on a ceramic board. (30mm ? 30mm ? 0.8mm) rth (ch - a) =83.3 c /w rth (ch - a) (t)=r(t) ? rth (ch - a) 5/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1A070AP ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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